P> In this research, the performance of the 19 nm single gate MOSFET is enhanced through the implementation of the high permittivity dielectric material. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at tox= 1.1nm.
As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. Threshold voltage (VTH) results were used as the evaluation variable. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. The settings of process parameters were determined by using Taguchi experimental design method. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. 229910052581 Si3N4 Inorganic materials 0.In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device.238000006011 modification reaction Methods 0.000 description 2.229910052796 boron Inorganic materials 0.000 description 2.238000004519 manufacturing process Methods 0.000 description 4.238000005755 formation reaction Methods 0.000 description 5.230000015572 biosynthetic process Effects 0.000 description 5.-1 Arsenic ions Chemical class 0.000 description 12.238000010884 ion-beam technique Methods 0.000 claims description 13.239000002019 doping agent Substances 0.000 claims description 15.239000000758 substrate Substances 0.000 claims abstract description 24.125000001475 halogen functional group Chemical group 0.000 title claims abstract 10.239000007943 implant Substances 0.000 title claims abstract description 52.239000004065 semiconductor Substances 0.000 title claims abstract description 123.Application granted granted Critical Publication of US6949796B1 publication Critical patent/US6949796B1/en Status Expired - Fee Related legal-status Critical Current Anticipated expiration legal-status Critical Links Assignors: PETERSON, KIRK D., ZIMMERMAN, JEFFREY S., ELLIS-MONAGHAN, JOHN J. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by International Business Machines Corp filed Critical International Business Machines Corp Priority to US10/711,484 priority Critical patent/US6949796B1/en Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Original Assignee International Business Machines Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Zimmerman Current Assignee (The listed assignees may be inaccurate.
Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Fee Related Application number US10/711,484 Inventor John J.
#HALO IMPLANT ION IOFF GAIN RO PDF#
Google Patents Halo implant in semiconductor structuresĭownload PDF Info Publication number US6949796B1 US6949796B1 US10/711,484 US71148404A US6949796B1 US 6949796 B1 US6949796 B1 US 6949796B1 US 71148404 A US71148404 A US 71148404A US 6949796 B1 US6949796 B1 US 6949796B1 Authority US United States Prior art keywords semiconductor region halo regions essentially Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6949796B1 - Halo implant in semiconductor structures US6949796B1 - Halo implant in semiconductor structures
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